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P5NC50FP Datasheet(PDF) 1 Page - STMicroelectronics |
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P5NC50FP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page  1/12 December 2002 STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3 Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™II MOSFET s TYPICAL RDS(on) = 1.3Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area (1)ISD ≤5.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX. TYPE VDSS RDS(on) ID STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 500 V 500 V 500 V 500 V <1.5 Ω <1.5 Ω <1.5 Ω <1.5 Ω 5.5A 5.5A 5.5A 5.5A Symbol Parameter Value Unit STP5NC50 STB5NC50/-1 STP5NC50FP VDS Drain-source Voltage (VGS =0) 500 V VDGR Drain-gate Voltage (RGS =20kΩ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 5.5 5.5(*) A ID Drain Current (continuos) at TC = 100°C 3.5 3.5(*) A IDM ( ) Drain Current (pulsed) 22 22 A PTOT Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.28 W/°C dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tj Tstg Operating Junction Temperature Storage Temperature -55 to 175 -65 to 175 °C °C (*)Limited only by maximum temperature allowed INTERNAL SCHEMATIC DIAGRAM TO-220 TO-220FP 1 3 D2PAK 1 2 3 I2PAK |
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Similar Description - P5NC50FP |
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