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STP60NS04ZB Datasheet(PDF) 2 Page - STMicroelectronics

Part # STP60NS04ZB
Description  N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP60NS04ZB Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1.0
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
60
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =30 V )
400
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Clamped Voltage
ID =1mA, VGS =0
-40<Tj<175°C
33
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS =16V,Tj =150 °C
50
µA
VDS =16V,Tj =175 °C
100
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ±10 V,Tj = 175 °C
VGS = ±16 V,Tj = 175 °C
50
150
µA
µA
VGSS
Gate-Source
Breakdown Voltage
IGS = ±100 µA
18
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID =1 mA
-40<Tj<150°C
1.7
3
4.2
V
RDS(on)
Static Drain-source On
Resistance
VGS =10 V,ID =30A
11
15
m
Ω
VGS =16 V,ID =30A
10
14
m
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =15V,ID = 30 A
20
40
S
Ciss
Input Capacitance
VDS =25V,f= 1MHz, VGS =0
1700
2100
pF
Coss
Output Capacitance
800
1000
pF
Crss
Reverse Transfer
Capacitance
190
240
pF



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