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STP75NE75 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP75NE75 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  STP75NE75 STP75NE75FP N - CHANNEL 75V - 0.01 Ω - 75A TO-220/TO-220FP STripFET ™ POWER MOSFET s TYPICAL RDS(on) = 0.01 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size ™” strip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s DC MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ® INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it STP75NE75 STP75NE75FP VDS Drain-source Volt age (VGS =0) 75 V VDGR Drain- gat e Voltage (RGS =20 k Ω)75 V VGS Gat e-source Voltage ± 20 V ID Drain Current (continuous) at Tc =25 oC75 40 A ID Drain Current (continuous) at Tc =100 oC53 28 A IDM ( •) Drain Current (pulsed) 300 160 A Ptot Tot al Dissipation at Tc =25 oC 160 50 W Derating F act or 1.06 0.37 W / o C VISO Insulation Withstand Voltage (DC) 2000 V dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤75 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STP75NE75 STP75NE75FP 75 V 75 V <0.013 Ω <0.013 Ω 75 A 40 A May 1999 TO-220 TO-220FP 1 2 3 1 2 3 1/9 |
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