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STP7NE10L Datasheet(PDF) 1 Page - STMicroelectronics |
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STP7NE10L Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  STP7NE10L N - CHANNEL 100V - 0.3 Ω - 7A - TO-220 STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.3 Ω s EXCEPTIONAL dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100 % AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size ™ " strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalanche charac- teristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ® INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STP7NE10L 100 V < 0.4 Ω 7 A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 100 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 o C7 A ID Drain Current (continuous) at Tc = 100 oC4.9 A IDM( •) Drain Current (pulsed) 28 A Ptot Total Dissipation at Tc = 25 oC45 W Derating Factor 0.3 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 175 oC ( •) Pulse width limited by safe operating area (1) ISD ≤7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1 2 3 TO-220 October 1999 1/5 |
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