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STPR1620CG Datasheet(PDF) 2 Page - STMicroelectronics |
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STPR1620CG Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() Symbol Test conditions Min. Typ. Max. Unit IR * Tj =25 °CVR =VRRM 50 µA Tj = 100 °C 0.2 0.6 mA VF** Tj = 125 °CIF =8 A 0.8 0.99 V Tj = 125 °CIF = 16 A 0.95 1.20 Tj =25 °CIF = 16 A 1.25 Pulse test : * tp = 5 ms, δ <2 % ** tp = 380 µs, δ <2 % To evaluate the conduction losses use the following equation : P = 0.78 x IF(AV) + 0.026 x IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS Symbol Test conditions Min. Typ. Max. Unit trr Tj =25 °CIF = 0.5A IR =1A Irr = 0.25A 30 ns tfr Tj =25 °CIF =3A VFR = 1.1 x VF max dIF/dt = 50 A/ µs 20 ns VFP Tj =25 °CIF =3A dIF/dt = 50 A/ µs3 V RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 3.0 °C/W Total 1.8 °C/W Rth (c) Coupling 0.6 °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCES STPR1620CG / STPS1620CT 2/6 |
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