BUF410A datasheet(3/9 Pages) STMICROELECTRONICS

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BUF410A

Electrical characteristics

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Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICER

Collector cut-off

current

(RBE = 10 Ω)

VCE = 1000 V

TC = 100 °C

0.2

ICEV

Collector cut-off

current

(VBE = -1.5 V)

VCE = 1000 V

TC = 100 °C

0.2

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

1mA

VCEO(sus)

(1) Collector-emitter

sustaining voltage

(IB = 0)

IC = 200 mA

450

VEBO

Emitter-base voltage

(IC = 0)

IE = 50 mA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 5 A IB = 0.5 A

IC = 5 A

IB = 0.5 A TC = 100 °C

IC = 10 A IB = 2 A

TC = 100 °C

0.8

0.5

2.8

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = 5 A IB = 0.5 A

IC = 5 A IB = 0.5 A TC = 100 °C

IC = 10 A IB = 2 A

TC = 100 °C

0.9

1.1

1.5

dic / dt

Rate of rise on-state

collector current

VCC = 300 V RC = 0

tp = 3 µs

IB1 = 0.75 A

TC = 25 °C

IB1 = 0.75 A

TC = 100 °C

IB1 = 3 A

TC = 100 °C

100

A/µs

VCE(dyn)

Collector-emitter

dynamic voltage

(3 µs)

VCC = 300 V

RC = 60 Ω

IB1 = 0.75 A

TC = 25 °C

IB1 = 0.75 A

TC = 100 °C

2.1

VCE(dyn)

Collector-emitter

dynamic voltage

(5 µs)

VCC = 300 V

RC = 60 Ω

IB1 = 0.75 A

TC = 25 °C

IB1 = 0.75 A

TC = 100 °C

1.1

Inductive load

Storage time

Fall time

Cross over time

IC = 5 A

VCC = 50 V

VBB = -5 V

RBB = 1.2 Ω

VClamp = 400 V

IB1 = 0.5 A

L = 0.5 mH

0.8

0.05

0.08

µs

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