BUL741 datasheet(3/10 Pages) STMICROELECTRONICS

Part #	BUL741

Description	High voltage fast-switching NPN power transistor

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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BUL741

Electrical characteristics

3/10

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (1) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE =0V)

VCE =1050V

0.2

µA

ICEO

Collector cut-off current

(IB =0)

VCE =400V

250

µA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE =1mA

VCEO(sus) (1)

Collector-emitter

sustaining voltage

(IB = 0)

IC =10mA

400

450

VCE(sat) (1) Collector-emitter

saturation voltage

IC =0.7A

IB =0.14A

IC =2A

IB =0.6A

0.15

0.5

1.5

VBE(sat) (1)

Base-emitter saturation

voltage

IC =2A

IB =0.6A

1.1

1.5

hFE

DC current gain

IC =0.1A

VCE =5V

IC =0.45A

VCE =3V

100

Resistive load

Storage time

Fall time

VCC =125V

IC =1A

IB1 = -IB2 =0.2A tp = 300µs

VBE(off) =-5V

2.5

350

3.5

500

µs

Ear

Repetitive avalanche

energy

L =2mH

C =1.8nF

VBE(off) =-5V

5mJ

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