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2SA1030BTZ Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # 2SA1030BTZ
Description  Silicon PNP Epitaxial
PDF  6 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SA1030BTZ Datasheet(HTML) 2 Page - Renesas Technology Corp

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2SA1029, 2SA1030
Rev.3.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SA1029
2SA1030
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–30
—
—
–55
—
—
V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–30
—
—
–50
—
—
V
IC = –1 mA, RBE =
∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
—
–5
—
—
V
IE = –10
µA, IC = 0
Collector cutoff current
ICBO
—
—
–0.5
—
—
–0.5
µA
VCB = –18 V, IE = 0
Emitter cutoff current
IEBO
—
—
–0.5
—
—
–0.5
µA
VEB = –2 V, IC = 0
DC current trnsfer ratio
hFE*
1
100
—
500
100
—
320
VCE = –12 V,
IC = –2 mA
Base to emitter voltage
VBE
—
—
–0.8
—
—
–0.8
V
VCE = –12 V,
IC = –2 mA
Collector to emitter
saturation voltage
VCE(sat)
—
—
–0.2
—
—
–0.2
V
IC = –10 mA,
IB = –1 mA
Gain bandwidth product
fT
200
280
—
200
280
—
MHz
VCB = –12 V,
IC = –2 mA
Collector output
capacitance
Cob
—
3.3
4.0
—
3.3
4.0
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SA1029 and 2SA1030 are grouped by hFE as follows.
B
C
D
2SA1029
100 to 200
160 to 320
250 to 500
2SA1030
100 to 200
160 to 320
—



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