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STF23NM60ND Datasheet(PDF) 5 Page - STMicroelectronics |
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STF23NM60ND Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND Electrical characteristics 5/15 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V (see Figure 2) 25 45 90 36 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 20 80 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 20 A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt =100 A/µs, VDD = 100 V (see Figure 4) 140 0.85 12 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 20 A Tj = 150 °C (see Figure 4) TBD TBD TBD ns µC A |
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