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STPS80H100TV Datasheet(PDF) 1 Page - STMicroelectronics |
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STPS80H100TV Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  STPS80H100TV ® July 1999 - Ed: 3A HIGH VOLTAGE POWER SCHOTTKY RECTIFIER High voltage dual Schottky barrier rectifier designed for high frequency telecom and computer Switched Mode Power Supplies and other power converters. Packaged in ISOTOP, this device is intended for use in medium voltage operation, and particu- larly, in high frequen cy circuitries where low switching losses and low noise are required. DESCRIPTION ISOTOPTM K2 K1 A2 A1 Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) RMS forward current 125 A IF(AV) Average forward current Tc = 120 °C δ = 0.5 Per diode Per device 40 80 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 700 A IRRM Repetitive peak reverse current tp = 2 µs square F = 1kHz 2 A IRSM Non repetitive peak reverse current tp = 100 µs square 5 A Tstg Storage temperature range - 55 to+ 150 °C Tj Maximum operating junction temperature * 150 °C dV/dt Critical rate of rise of reverse voltage 10000 V/ µs ABSOLUTE RATINGS (limiting values, per diode) IF(AV) 2 x 40 A VRRM 100 V Tj (max) 150 °C VF (max) 0.65 V MAIN PRODUCT CHARACTERISTICS NEGLIGIBLESWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGECUR- RENT AND FORWARD VOLTAGE DROP AVALANCHE RATED LOW INDUCTANCE PACKAGE INSULATED PACKAGE : Insulated voltage = 2500 V(RMS) Capacitance = 45 pF FEATURES AND BENEFITS *: dPtot dTj < 1 Rth (j−a) thermal runaway condition for a diode on its own heatsink 1/4 |
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