N-CHANNEL 30V - 0.050

Ω - 3.5A SO-8

P-CHANNEL 30V - 0.140

Ω - 3A SO-8

STripFET™ II POWER MOSFET

1/10

February 2002

.

STS3C3F30L

s

s

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

LOW THRESHOLD DRIVE

DESCRIPTION

This application specific Power MOSFET is the second

generation of STMicroelectronis unique "Single Feature

Size™" strip-based process. The resulting transistor

shows extremely high packing density for low on-resis-

tance, rugged avalanche characteristics and less critical

alignment steps therefore a remarkable manufacturing re-

producibility.

APPLICATIONS

s

DC/DC CONVERTERS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s

POWER MANAGEMENT IN CELLULAR

PHONES

TYPE

STS3C3F30L(N-Channel)

STS3C3F30L(P-Channel)

30 V

30 V

< 65 m

Ω

< 165 m

Ω

3.5 A

3 A

SO-8

ABSOLUTE MAXIMUM RATINGS

(

Note: P-CHANNEL MOSFET actual polarity of voltages and current

has to be reversed

Symbol

Parameter

N-CHANNEL

P-CHANNEL

Unit

30

V

30

V

Gate- source Voltage

± 16

V

Single Operating

3.5

2.7

A

Single Operating

2.2

1.7

A

Drain Current (pulsed)

14

11

A

1.6

2

W

W

Storage Temperature

-60 to 150

°C

Max. Operating Junction Temperature

150

°C

INTERNAL SCHEMATIC DIAGRAM