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2SC2734 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # 2SC2734
Description  Silicon NPN Epitaxial
PDF  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC2734 Datasheet(HTML) 2 Page - Renesas Technology Corp

  2SC2734 Datasheet HTML 1Page - Renesas Technology Corp 2SC2734 Datasheet HTML 2Page - Renesas Technology Corp 2SC2734 Datasheet HTML 3Page - Renesas Technology Corp 2SC2734 Datasheet HTML 4Page - Renesas Technology Corp 2SC2734 Datasheet HTML 5Page - Renesas Technology Corp 2SC2734 Datasheet HTML 6Page - Renesas Technology Corp 2SC2734 Datasheet HTML 7Page - Renesas Technology Corp 2SC2734 Datasheet HTML 8Page - Renesas Technology Corp  
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2SC2734
Rev.2.00 Aug 10, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
20
V
IC = 10
µA, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
11
V
IC = 1 mA, RBE =
Emitter to base breakdown voltage
V(BR)EBO
3
V
IE = 10
µA, IC = 0
Collector cutoff current
ICBO
0.5
µA
VCB = 10 V, IE = 0
Collector to emitter saturation voltage
VCE(sat)
0.7
V
IC = 10 mA, IB = 5 mA
DC current transfer ratio
hFE
20
90
200
VCE = 10 V, IC = 5 mA
Gain bandwidth product
fT
1.4
3.5
GHz
VCE = 10 V, IC = 10 mA
Collector output capacitance
Cob
0.9
1.5
pF
VCB = 10 V, IE = 0, f = 1 MHz
Conversion gain
CG
15
dB
VCC = 6 V, IC = 2 mA,
f = 900 MHz,
fOSC = 930 MHz (0dBm),
fout = 30 MHz
Noise figure
NF
9
dB
VCC = 6 V, IC = 2 mA,
f = 900 MHz,
fOSC = 930 MHz (0dBm),
fout = 30 MHz
Oscillating output voltage
VOSC
140
mV
VCC = 6 V, IC = 5 mA,
f = 930 MHz



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