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2SC5594XP-TL-E Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # 2SC5594XP-TL-E
Description  Silicon NPN Epitaxial High Frequency Low Noise Amplifier
PDF  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5594XP-TL-E Datasheet(HTML) 2 Page - Renesas Technology Corp

  2SC5594XP-TL-E Datasheet HTML 1Page - Renesas Technology Corp 2SC5594XP-TL-E Datasheet HTML 2Page - Renesas Technology Corp 2SC5594XP-TL-E Datasheet HTML 3Page - Renesas Technology Corp 2SC5594XP-TL-E Datasheet HTML 4Page - Renesas Technology Corp 2SC5594XP-TL-E Datasheet HTML 5Page - Renesas Technology Corp 2SC5594XP-TL-E Datasheet HTML 6Page - Renesas Technology Corp 2SC5594XP-TL-E Datasheet HTML 7Page - Renesas Technology Corp 2SC5594XP-TL-E Datasheet HTML 8Page - Renesas Technology Corp  
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2SC5594
Rev.2.00 Aug 10, 2005 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to base breakdown voltage
V(BR)CBO
12
—
—
V
IC = 10
µA , IE = 0
Collector cutoff current
ICBO
—
—
1
µA
VCB = 10 V , IE = 0
Collector cutoff current
ICEO
—
—
1
µA
VCE = 4 V , RBE =
∞
Emitter cutoff current
IEBO
—
—
12
µA
VEB = 0.8 V , IC = 0
DC current transfer ratio
hFE
60
100
140
VCE = 2 V , IC = 20 mA
Collector output capacitance
Cob
—
0.3
0.6
pF
VCB = 2 V , IE = 0
f = 1 MHz
Gain bandwidth product
fT
21
24
—
GHz
VCE = 2 V , IC = 30 mA
f = 2 GHz
Power gain
PG
14
18
—
dB
VCE = 2 V, IC = 30 mA
f = 1.8 GHz
Noise figure
NF
—
1.2
1.6
dB
VCE = 2 V, IC = 5 mA
f = 1.8 GHz



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