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2SD1306NETL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SD1306NETL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 6 page  Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1306 Silicon NPN Epitaxial REJ03G0784-0200 (Previous ADE-208-1144) Rev.2.00 Aug.10.2005 Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5 V Collector current IC 0.7 A Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C |
Similar Part No. - 2SD1306NETL-E |
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Similar Description - 2SD1306NETL-E |
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