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STS6DNF30V Datasheet(PDF) 1 Page - STMicroelectronics

Part # STS6DNF30V
Description  DUAL N-CHANNEL 30V - 0.026ohm - 6A SO-8 2.5V-DRIVE STripFET™ II POWER MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS6DNF30V Datasheet(HTML) 1 Page - STMicroelectronics

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July 2002
STS6DNF30V
DUAL N-CHANNEL 30V - 0.026
Ω - 6A SO-8
2.5V-DRIVE STripFET™ II POWER MOSFET
s
TYPICAL RDS(on) = 0.026Ω (@4.5V)
s
TYPICAL RDS(on) = 0.030Ω (@2.5V)
s
ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size
™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
s
BATTERY SAFETY UNIT IN NOMADIC
EQUIPMENT
s
DC-DC CONVERTERS
s
POWER MANAGEMENT IN PORTABLE/
DESKTOP PCS
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STS6DNF30V
30 V
<0.030
Ω (@4.5V)
<0.038
Ω (@2.5V)
6 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
±12
V
ID
Drain Current (continuos) at TC = 25°C
Single Operation
Drain Current (continuos) at TC = 100°C
Single Operation
6
3.8
A
A
IDM (l)
Drain Current (pulsed)
24
A
PTOT
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
2
1.6
W
W
SO-8
INTERNAL SCHEMATIC DIAGRAM


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