N-CHANNEL 30V - 0.018

Ω - 7A SO-8

P-CHANNEL 30V - 0.070

Ω - 4A SO-8

STripFET™ POWER MOSFET

1/10

June 2001

.

STS7C4F30L

s

s

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

DC/DC CONVERTERS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s

POWER MANAGEMENT IN CELLULAR

PHONES

TYPE

STS7C4F30L(N-Channel)

STS7C4F30L(P-Channel)

30 V

30 V

<0.022

Ω

<0.080

Ω

7 A

4 A

SO-8

ABSOLUTE MAXIMUM RATINGS

(

Note: P-CHANNEL MOSFET actual polarity of voltages and current

has to be reversed

Symbol

Parameter

N-CHANNEL

P-CHANNEL

Unit

30

30

V

30

30

V

Gate- source Voltage

± 20

± 20

V

Single Operating

74

A

Single Operating

4.4

2.5

A

Drain Current (pulsed)

28

16

A

1.6

2

W

W

Storage Temperature

-60 to 150

°C

Max. Operating Junction Temperature

150

°C

INTERNAL SCHEMATIC DIAGRAM