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R1EX24016ASAS0I Datasheet(PDF) 13 Page - Renesas Technology Corp |
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R1EX24016ASAS0I Datasheet(HTML) 13 Page - Renesas Technology Corp |
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13 / 24 page ![]() R1EX24016AxxS0I Page Write: The EEPROM is capable of the page write operation which allows any number of bytes up to 16 bytes to be written in a single write cycle. The page write is the same sequence as the byte write except for inputting the more write data. The page write is initiated by a start condition, device address word, memory address(n) and write data (Dn) with every ninth bit acknowledgment. The EEPROM enters the page write operation if the EEPROM receives more write data (Dn+1) instead of receiving a stop condition. The a0 to a3 address bits are automatically incremented upon receiving write data (Dn+1). The EEPROM can continue to receive write data up to 16 bytes. If the a0 to a3 address bits reaches the last address of the page, the a0 to a3 address bits will roll over to the first address of the same page and previous write data will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters internally-timed write cycle. Page Write Operation Device address Memory address (n) Write data (n+m) Write data (n) 16k 10 10 W Stop Start ACK ACK ACK ACK R/W WP REJ03C0360-0001 Rev.0.01 Dec. 28, 2007 Page 13 of 22 |
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