RJK6002DPD datasheet(1/4 Pages) RENESAS

Part #	RJK6002DPD

Description	Silicon N Channel MOS FET High Speed Power Switching

PDF	4 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Rev.1.00 Nov 09, 2006 page 1 of 3

RJK6002DPD

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1483-0100

Rev.1.00

Nov 09, 2006

Features

• Low on-resistance

• Low leakage current

• High speed switching

Outline

RENESAS Package code: PRSS0004ZA-A

(Package name : MP-3A)

1

1. Gate

2. Drain

3. Source

4. Drain

3

2, 4

2

4

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

600

V

Gate to source voltage

VGSS

±30

V

Drain current

ID

2

A

Drain peak current

ID (pulse)

Note1

4

A

Body-drain diode reverse drain current

IDR

2

A

Body-drain diode reverse drain peak current

IDR (pulse)

Note1

4

A

Avalanche current

IAP

Note3

1

A

Avalanche energy

EAR

Note3

0.05

mJ

Channel dissipation

Pch

Note2

30

W

Channel to case thermal impedance

θch-c

4.17

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25

°C

3. STch = 25

°C, Tch ≤ 150°C

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