STTH16003TV datasheet(2/5 Pages) STMICROELECTRONICS

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Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage

current

VR = 300 V

Tj = 25

°C

200

µA

Tj = 125

°C

0.2

VF **

Forward voltage drop

IF = 80 A

Tj=25

°C

1.2

Tj = 125

°C

0.8

0.95

Pulse test : * tp = 5 ms,

δ <2 %

** tp = 380

µs, δ <2%

To evaluate the maximum conduction losses use the following equation:

P = 0.75 x IF(AV) + 0.0025 x IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Tests conditions

Min.

Typ.

Max.

Unit

trr

IF = 0.5 A

Irr = 0.25 A

IR =1A

Tj = 25

°C

IF =1 A

dIF/dt = - 50 A/

µsVR =30 V

tfr

IF =80 A

dIF/dt = 200 A/

µsTj = 25°C

1000

VFP

VFR = 1.1 x VF max.

Sfactor

Vcc = 200 V

IF =80 A

dIF/dt = 200 A/

µs

Tj = 125

°C

0.3

IRM

RECOVERY CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

Per diode

Total

0.7

0.4

°C/W

Rth (c)

Coupling

0.1

When the diodes 1 and 2 are used simultaneously:

∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C)

THERMAL RESISTANCES

STTH16003TV

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