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HM62V8100LBPI-5SL Datasheet(PDF) 13 Page - Renesas Technology Corp

Part # HM62V8100LBPI-5SL
Description  Wide Temperature Range Version 8 M SRAM (1024-kword 쨈 8-bit)
PDF  21 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HM62V8100LBPI-5SL Datasheet(HTML) 13 Page - Renesas Technology Corp

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HM62V8100I Series
11
Write Cycle
HM62V8100I
-5
Parameter
Symbol
Min
Max
Unit
Notes
Write cycle time
t
WC
55
—
ns
Address valid to end of write
t
AW
50
—
ns
Chip selection to end of write
t
CW
50
—
ns
5
Write pulse width
t
WP
40
—
ns
4
Address setup time
t
AS
0
—
ns
6
Write recovery time
t
WR
0
—
ns
7
Data to write time overlap
t
DW
25
—
ns
Data hold from write time
t
DH
0—
ns
Output active from end of write
t
OW
5
—
ns
2
Output disable to output in High-Z
t
OHZ
0
20
ns
1, 2
Write to output in high-Z
t
WHZ
0
20
ns
1, 2
Notes: 1. t
CHZ, tOHZ and t WHZ are defined as the time at which the outputs achieve the open circuit conditions
and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t
HZ max is less than tLZ min both for a given device
and from device to device.
4. A write occures during the overlap of a low
CS1, a high CS2, a low WE. A write begins at the latest
transition among
CS1 going low, CS2 going high, WE going low. A write ends at the earliest
transition among
CS1 going high, CS2 going low, WE going high. t
WP is measured from the
beginning of write to the end of write.
5. t
CW is measured from the later of CS1 going low or CS2 going high to the end of write.
6. t
AS is measured from the address valid to the beginning of write.
7. t
WR is measured from the earliest of CS1 or WE going high or CS2 going low to the end of write
cycle.



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