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HAF2021 Datasheet(PDF) 5 Page - Renesas Technology Corp |
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HAF2021 Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 9 page ![]() HAF2021(L), HAF2021(S) Rev.2.00, Mar.05.2004, page 5 of 8 25 20 15 10 5 -25 0 25 50 75 100 125 150 0 Pulse Test Case Temperature Tc ( °C) Static Drain to Source State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current VGS = 10 V VGS = 6 V ID = 50 A 25 A, 10 A ID = 50 A 25 A, 10 A 100 50 20 10 1 0.1 0.5 0.2 5 2 0.1 0.5 1 5 10 50 100 Tc = -25 °C 25 °C 75 °C VDS = 10 V Pulse Test 1 2 5 10 100 20 50 1000 200 500 100 20 10 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C Reverse Drain Current IDR (A) Body to Drain Diode Reverse Recovery Time 0.5 1 5 10 100 50 500 tr 1000 500 50 100 10 5 200 20 2 1 VGS = 10 V, VDD = 30 V PW = 300 µs, duty < 1 % tf td(on) td(off) Drain Current ID (A) Switching Characteristics 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 VGS = 5 V 0, -5 V Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 10000 1000 100 10 010 20 30 40 50 V = 0 f = 1 MHz GS Coss Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage |
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