HAT1025R

Rev.10.00 Sep 07, 2005 page 2 of 7

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

–20

V

Gate to source voltage

±10

V

Drain current

–4.5

A

Drain peak current

Note 1

–36

A

Body-drain diode reverse drain current

–4.5

A

Channel dissipation

Pch

Note 2

2

W

Channel dissipation

Pch

Note 3

3

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. 1 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

3. 2 Drive operation: When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

–20

—

—

V

Gate to source breakdown voltage

±10

—

—

V

Gate to source leak current

—

—

±10

µA

Zero gate voltage drain current

—

—

–10

µA

Gate to source cutoff voltage

–0.5

—

–1.5

V

—

0.065

0.095

Ω

Note 4

Static drain to source on state resistance

—

0.09

0.15

Ω

Note 4

Forward transfer admittance

4.5

7

—

S

Note 4

Input capacitance

Ciss

—

860

—

pF

Output capacitance

Coss

—

450

—

pF

Reverse transfer capacitance

Crss

—

150

—

pF

f = 1 MHz

Turn-on delay time

—

20

—

ns

Rise time

—

120

—

ns

Turn-off delay time

—

120

—

ns

Fall time

—

100

—

ns

≅ –10 V

Body-drain diode forward voltage

—

–0.9

–1.4

V

Note 4

Body-drain diode reverse recovery time

—

60

—

ns

µs

Note:

4. Pulse test