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STV160NF02L Datasheet(PDF) 1 Page - STMicroelectronics

Part # STV160NF02L
Description  N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STV160NF02L Datasheet(HTML) 1 Page - STMicroelectronics

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STV160NF02L
N - CHANNEL 20V - 0.0016
Ω - 160A - PowerSO-10
STripFET
™ MOSFET
s
TYPICAL RDS(on) = 0.0016
Ω
s
ULTRA LOW ON-RESISTANCE
s
ULTRA FAST SWITCHING
s
100% AVALANCHE TESTED
s
VERY LOW GATE CHARGE
s
LOW THRESHOLD DRIVE
s
LOW PROFILE, VERY LOW PARASITIC
INDUCTANCE PowerSO-10 PACKAGE
DESCRIPTION
The
STV160NF02L
represents the
second
generation
of
Application
Specific
STMicroelectronics well established STripFET
™
process based on a very unique strip layout
design. The resulting MOSFET shows unrivalled
high packing density with ultra low on-resistance
and superior switching charactestics. Process
simplification
also
translates
into
improved
manufacturing reproducibility. This device is
particularly suitable for high current, low voltage
switching application where efficiency is crucial.
APPLICATIONS
s
BUCK CONVERTERS IN HIGH
PERFORMACE TELECOM AND VRMs
DC-DC CONVERTERS
®
June 1999
INTERNAL SCHEMATIC DIAGRAM
1
10
PowerSO-10
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS =0)
20
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)20
V
VGS
Gate-source Voltage
± 20
V
ID(**)
Drain Current (continuous) at Tc =25
oC
160
A
ID
Drain Current (continuous) at Tc =100
oC
113
A
IDM(
•)
Drain Current (pulsed)
640
A
Ptot
T otal Dissipation at Tc =25
oC
160
W
Derating F actor
1.07
W /
oC
Tstg
Storage Temperat ure
-65 to 175
oC
Tj
Max. Operating Junction T emperature
175
oC
(
•) Pulse width limited by safe operating area
( **) Limited only maximum junction temperature allowed by PowerSO-10
TYPE
VDSS
RDS(on )
ID
STV160NF02L
20 V
< 0.0025
Ω
160 A
CONNECTION DIAGRAM (TOP VIEW)
1/8


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