APM4034NU datasheet(2/10 Pages) ANPEC

2 / 10 page

Rev. A.1 - Mar., 2007

www.anpec.com.tw

APM4034NU

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TA = 25°C Unless Otherwise Noted)

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±20

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to 150

°C

Diode Continuous Forward Current

TC=25°C

20*

TC=25°C

IDP

300

µs Pulse Drain Current Tested

TC=100°C

TC=25°C

20*

Continuous Drain Current

TC=100°C

TC=25°C

Maximum Power Dissipation

TC=100°C

RθJC

Thermal Resistance-Junction to Case

2.5

°C/W

RθJA

Thermal Resistance-Junction to Ambient

°C/W

Notes

：

* Current limited by bond wire.

Electrical Characteristics (T

A = 25°C unless otherwise noted)

APM4034NU

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

VDS=32V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

1.5

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

VGS=10V, IDS=10A

RDS(ON)

a Drain-Source On-state Resistance

VGS=5V, IDS=5A

Ω

Diode Characteristics

VSD

Diode Forward Voltage

ISD=2A, VGS=0V

0.8

1.1

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ISD=10A, dISD/dt =100A/

µs

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