H7N1002LS datasheet(4/9 Pages) RENESAS

4 / 9 page

H7N1002LD, H7N1002LS, H7N1002LM

Rev.7.00 Apr 07, 2006 page 4 of 8

Case Temperature

Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

–40

120

160

10 V

VGS = 4.5 V

50 A

ID = 10 A, 20 A

50 A

10 A, 20 A

Pulse Test

0.01

0.1

200

100

0.1

0.02

75°C

25°C

100

VDS = 10 V

Pulse Test

Reverse Drain Current

IDR (A)

Body to Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Dynamic Input Characteristics

Drain Current

ID (A)

Switching Characteristics

0.1

0.3

100

di / dt = 100 A /

µs

VGS = 0, Ta = 25°C

010

500

1000

5000

2000

100

200

10000

20000

200

160

240

320

400

120

160

ID = 75 A

VGS

VDS

1000

100

300

0.1

0.3

100

td(on)

td(off)

VDD = 80 V

50 V

25 V

VDD = 25 V

50 V

80 V

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

Tc = –25°C

VGS = 10 V, VDD = 30 V

PW = 5

µs, duty ≤ 1 %

Rg = 4.7

Ω

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