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STW12NB60 Datasheet(PDF) 3 Page - STMicroelectronics |
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STW12NB60 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 3/8 STW12NB60 Safe Operating Area Thermal Impedance ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time Rise Time VDD = 300V, ID = 5.5 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 27 ns tr 12 ns Qg Total Gate Charge VDD = 480V, ID = 11 A, VGS = 10V, RG =4.7Ω 54 70 nC Qgs Gate-Source Charge 17 nC Qgd Gate-Drain Charge 23 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480V, ID = 11 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 20 ns tf Fall Time 15 ns tc Cross-over Time 32 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 12 A ISDM (2) Source-drain Current (pulsed) 48 A VSD (1) Forward On Voltage ISD = 12 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 11 A, di/dt = 100 A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 600 ns Qrr Reverse Recovery Charge 6.5 µC IRRM Reverse Recovery Current 20.5 A |
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