STW20NM50FD datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STW20NM50FD

Description	N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh™ Power MOSFET with FAST DIODE

PDF	8 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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June 2002

STW20NM50FD

N-CHANNEL 500V - 0.22

Ω - 20A TO-247

FDmesh™ Power MOSFET (with FAST DIODE)

(1)ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*)Limited only by maximum temperature allowed

s

TYPICAL RDS(on) = 0.22Ω

s

HIGH dv/dt AND AVALANCHE CAPABILITIES

s

100% AVALANCHE TESTED

s

LOW INPUT CAPACITANCE AND GATE CHARGE

s

LOW GATE INPUT RESISTANCE

s

TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

DESCRIPTION

The FDmesh™ associates all advantages of reduced

on-resistance and fast switching with an intrinsic fast-

recovery body diode. It is therefore strongly recom-

mended for bridge topologies, in particular ZVS phase-

shift converters.

APPLICATIONS

s

ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS

FOR SMPS AND WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW20NM50FD

500V

<0.25

Ω

20 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

20

A

ID

Drain Current (continuos) at TC = 100°C

14

A

IDM (q)

Drain Current (pulsed)

80

A

PTOT

Total Dissipation at TC = 25°C

214

W

Derating Factor

1.42

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

20

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-247

1

2

3

INTERNAL SCHEMATIC DIAGRAM

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