STW45NM50FD datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STW45NM50FD

Description	N-CHANNEL 500V - 0.07ohm - 45A TO-247 FDmesh™ Power MOSFET With FAST DIODE

PDF	8 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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June 2002

STW45NM50FD

N-CHANNEL 500V - 0.07

Ω - 45A TO-247

FDmesh™Power MOSFET (With FAST DIODE)

n

TYPICAL RDS(on) = 0.07Ω

n

HIGH dv/dt AND AVALANCHE CAPABILITIES

n

100% AVALANCHE TESTED

n

LOW INPUT CAPACITANCE AND GATE

CHARGE

n

LOW GATE INPUT RESISTANCE

n

TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

DESCRIPTION

The FDmesh™ associates all advantages of re-

duced on-resistance and fast switching with an in-

trinsic fast-recovery body diode. It is therefore

strongly recommended for bridge topologies, in par-

ticular ZVS phase-shift converters.

APPLICATIONS

n

ZVS PHASE-SHIFT FULL BRIDGE

CONVERTERS FOR SMPS AND WELDING

EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW45NM50FD

500V

< 0.1

Ω

45 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

45

A

ID

Drain Current (continuos) at TC = 100°C

28.4

A

IDM (l)

Drain Current (pulsed)

180

A

PTOT

Total Dissipation at TC = 25°C

417

W

Derating Factor

2.08

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

20

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1) ISD ≤45A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

1

2

3

TO-247

INTERNAL SCHEMATIC DIAGRAM

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