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R8C2K Datasheet(PDF) 414 Page - Renesas Technology Corp |
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R8C2K Datasheet(HTML) 414 Page - Renesas Technology Corp |
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414 / 471 page  R8C/2K Group, R8C/2L Group 20. Flash Memory Rev.1.10 Dec 21, 2007 Page 397 of 450 REJ09B0406-0110 20.7.1.4 How to Access Write 0 before writing 1 when setting Bits FMR01, FMR02 in the FMR0 register, or FMR11 bit in the FMR1 register to 1. Do not generate an interrupt between writing 0 and 1. 20.7.1.5 Rewriting User ROM Area In EW0 Mode, if the supply voltage drops while rewriting any block in which a rewrite control program is stored, it may not be possible to rewrite the flash memory because the rewrite control program cannot be rewritten correctly. In this case, use standard serial I/O mode. 20.7.1.6 Program Do not write additions to the already programmed address. 20.7.1.7 Suspend Do not use the block erase command during program-suspend. 20.7.1.8 Entering Stop Mode or Wait Mode Do not enter stop mode or wait mode during erase-suspend. 20.7.1.9 Program and Erase Voltage for Flash Memory To perform programming and erasure, use VCC = 2.7 V to 5.5 V as the supply voltage. Do not perform programming and erasure at less than 2.7 V. |
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