T810-600B datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

012345678

P(W)

(A)

T(RMS)

180°

Fig 1a: Maximum power dissipation versus RMS

on-state current (T810 only).

012345678

P(W)

(A)

T(RMS)

180°

Fig 1b: Maximum power dissipation versus RMS

on-state current. (T835 only)

100

125

P(W)

Tcase (°C)

Rth=0°C/W

Rth=5°C/W

Rth=10 °C/W

Rth=15 °C/W

125

110

120

115

Tamb(°C)

Fig 2: Correlation between maximum power dissi-

pation and maximum allowable temperatures

(Tamb and Tcase) for different thermal resistances

heatsink+contact.

100

125

(A)

T(RMS)

Tamb(°C)

Fig 3: RMS on-state current versus ambient tem-

perature.

1E-3

1E-2

1E-1

1E+0

0.1

0.2

0.5

1.0

K=[Zth(j-c)/Rth(j-c)]

tp(s)

Fig 4: Relative variation of thermal impedance

junction to case versus pulse duration.

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

,I [Tj]/I

,I [Tj=25°C]

GT H

Tj(°C)

IGT

Fig 5: Relative variation of gate trigger current and

holding current versus junction temperature (typi-

cal values).

T810-xxxB / T835-xxxB

3/5

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