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STU40N2LH5 Datasheet(PDF) 4 Page - STMicroelectronics |
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STU40N2LH5 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() Electrical characteristics STD40N2LH5 - STU40N2LH5 4/12 Table 6. Switching on/off (resistive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD= 10 V, ID= 20 A, RG= 4.7 Ω, VGS= 10 V (Figure 2 and Figure 7) TBD TBD ns ns td(off) tf Turn-off delay time Fall time VDD= 10 V, ID= 20 A, RG= 4.7 Ω, VGS= 10 V (Figure 2 and Figure 7) TBD TBD ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed)(1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 40 160 A A VSD Forward on voltage ISD= 20 A, VGS=0 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 40 A, di/dt =100 A/µs, VDD= 20 V, Tj = 25 °C (Figure 4) TBD TBD TBD ns nC A |
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