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2SA1965-S Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SA1965-S Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SA1965-S No. A1085-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE(sat) IC=--10mA, IB=--1mA --16 --35 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=--10mA, IB=--1mA --0.75 --1.1 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10μA, IE=0A --15 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞ --10 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10μA, IC=0A --5 V On Resistance Ron IB=--3mA, f=1MHz 1.2 Ω Package Dimensions unit : mm (typ) 7029-002 0.25 0.2 1.4 0.45 1 3 2 0.1 2 3 1 Top View Bottom View 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP IC -- VCE Collector-to-Emitter Voltage, VCE -- V IC -- VCE Collector-to-Emitter Voltage, VCE -- V IB=0μA --20 0 0 --0.4 --1.2 --1.6 --0.8 --2.0 ITR05035 --100 --40 --60 --80 --450 μA --400μ A --350 μA --300μA --250μA --200μA --150μA --100 μA --50 μA IB=0μA --2 0 0 --1 --2 --3 --4 --5 ITR05036 --10 --4 --6 --8 --20μ A --18μA --16μA --14μA --12μA --10μA --8 μA --6 μA --4 μA --2 μA |
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