TT2274T

No. A1139-1/4

Features

•

High breakdown voltage (VCBO≥1400V).

•

Ultrahigh-speed switching.

•

Wide ASO.

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1400

V

Collector-to-Emitter Voltage

VCEO

800

V

Emitter-to-Base Voltage

VEBO

5V

Collector Current

IC

1A

Collector Current (Pulse)

ICP

PW≤300μs, duty cycle≤10%

2

A

Collector Dissipation

PC

1W

Tc=25°C25

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics

at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=800V, IE=0A

10

μA

Collector Cutoff Current

ICES

VCB=1400V, RBE=0Ω

1mA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

1

mA

DC Current Gain

hFE1VCE=5V, IC=0.1A

15

35

hFE2VCE=5V, IC=0.5A

4

Continued on next page.

Ordering number : ENA1139

90308CB TI IM TC-00001577

SANYO Semiconductors

DATA SHEET

TT2274T

NPN Triple Diffused Planar Silicon Transistor

Switching Regulator Applications

www.semiconductor-sanyo.com/network

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customer

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