MBR30H35PT datasheet(2/4 Pages) VISHAY

2 / 4 page

MBR30H35PT thru MBR30H60PT

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88792

Revision: 19-May-08

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise specified)

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

MBR30H35PT

MBR30H45PT

MBR30H50PT

MBR30H60PT

UNIT

TYP.

MAX.

TYP.

MAX.

Maximum instantaneous forward voltage

per diode (1)

IF = 20 A

IF = 30 A

TJ = 25 °C

TJ = 125 °C

TJ = 25 °C

TJ =125 °C

0.54

0.62

0.66

0.58

0.73

0.66

0.60

0.66

0.74

0.63

0.83

0.70

Maximum reverse current at rated VR

per diode (2)

TJ = 25 °C

TJ = 125 °C

6.0

150

4.0

150

µA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR30H35PT

MBR30H45PT

MBR30H50PT

MBR30H60PT

UNIT

Thermal resistance, junction to case

per diode

RθJC

1.4

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-247AD

MBR30H45PT-E3/45

6.13

30/tube

Tube

Figure 1. Forward Current Derating Curve

025

100

125

150

175

Case Temperature (°C)

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

100

150

250

200

Number of Cycles at 60 Hz

J = TJ Max.

8.3 ms Single Half Sine-Wave

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