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MBRF30H90CT Datasheet(PDF) 2 Page - Vishay Siliconix |
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MBRF30H90CT Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page ![]() New Product MBR(F,B)30H90CT & MBR(F,B)30H100CT Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88791 Revision: 19-May-08 2 Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Maximum instantaneous forward voltage per diode (1) IF = 15 A IF = 15 A IF = 30 A IF = 30 A TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VF 0.82 0.67 0.93 0.80 V Maximum reverse current at rated VR per diode (2) TJ = 25 °C TJ = 125 °C IR 5.0 6.0 µA mA THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical thermal resistance per diode RθJC 1.9 4.6 1.9 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR30H100CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF30H100CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB30H100CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB30H100CT-E3/81 1.35 81 800/reel Tape and reel TO-220AB MBR30H100CTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB MBRF30H100CTHE3/45 (1) 1.99 45 50/tube Tube TO-263AB MBRB30H100CTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB MBRB30H100CTHE3/81 (1) 1.35 81 800/reel Tape and reel Figure 1. Forward Derating Curve Per Diode 0 5 10 15 20 25 30 35 75 50 25 0 100 125 150 175 MBRF30H90CT - MBRF30H100CT MBR30H90CT - MBR30H100CT MBRB30H90CT - MBRB30H100CT Case Temperature (°C) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode 0 50 100 150 200 250 300 1 10 100 T J = TJ Max. 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz |
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