New Product

MBR40H35CT thru MBR40H60CT

Vishay General Semiconductor

Document Number: 88920

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

Dual Common-Cathode Schottky Rectifiers

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Mounting Torque: 10 in-lbs maximum

Polarity: As marked

PRIMARY CHARACTERISTICS

20 A x 2

35 V to 60 V

350 A, 320 A

0.55 V, 0.60 V

100 µA

175 °C

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

1

2

3

PARAMETER

SYMBOL

MBR40H35CT

MBR40H45CT

MBR40H50CT

MBR40H60CT

UNIT

Maximum repetitive peak reverse voltage

35

45

50

60

V

Maximum average forward rectified

current (Fig. 1)

total device

per diode

40

20

A

Peak forward surge current 8.3 ms

single half sine-wave superimposed on

rated load

per diode

350

320

A

Peak repetitive reverse current per diode

1.0

A

Peak non-repetitive reverse surge

energy (8/20 µs waveform)

per diode

20

mJ

Non-repetitive avalanche energy

per diode

22.5

mJ

dV/dt

10 000

V/µs

Operating junction and storage temperature range

- 65 to + 175

°C