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BAS86-GS08 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAS86-GS08 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page  BAS86 Document Number 85511 Rev. 1.7, 03-Mar-06 Vishay Semiconductors www.vishay.com 1 94 9371 Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steer- ing, biasing and coupling diodes for fast switching and low logic level applications • This diode is also available in a DO35 case with type designation BAT86. • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Applications where a very low forward voltage is required Mechanical Data Case: MiniMELF Glass case SOD80 Weight: approx. 31 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified 1) Valid provided that electrodes are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Valid provided that electrodes are kept at ambient temperature Part Ordering code Marking Remarks BAS86 BAS86-GS18 or BAS86-GS08 Tape and Reel Parameter Test condition Symbol Value Unit Continuous reverse voltage VR 50 V Forward continuous current Tamb = 25 °C IF 2001) mA Repetitive peak forward current tp < 1 s, Tamb = 25 °C, ν ≤ 0.5 IFRM 5001) mA Power dissipation1) Tamb = 25 °C Ptot 2001) mW Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 3001) K/W Junction temperature Tj 125 °C Ambient operating temperature range Tamb - 65 to + 125 °C Storage temperature range TS - 65 to +150 °C e2 |
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Similar Description - BAS86-GS08 |
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