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TDA8933BTW Datasheet(PDF) 21 Page - NXP Semiconductors |
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TDA8933BTW Datasheet(HTML) 21 Page - NXP Semiconductors |
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21 / 42 page ![]() TDA8933B_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 23 October 2008 21 of 42 NXP Semiconductors TDA8933B Class D audio amplifier [1] RS is the total series resistance of an inductor and a ESR single ended capacitor in the application. [2] Output power is measured indirectly; based on RDSon measurement. [3] THD+N is measured in a bandwidth of 20 Hz to 20 kHz, AES17 brick wall. [4] B = 22 Hz to 20 kHz, AES17 brick wall. [5] 14. Application information 14.1 Output power estimation The output power Po at THD+N = 0.5 %, just before clipping, for the SE and the BTL configurations can be estimated using Equation 2 and Equation 3. Table 13. BTL characteristics VP = 25 V, RL = 16 Ω, fi = 1 kHz, fosc = 320 kHz, RS < 0.1 Ω [1] and Tamb = 25 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Po(RMS) RMS output power continuous time output power[2] RL = 8 Ω; VP = 17 V THD+N = 0.5 %, fi = 1 kHz 11.9 13.7 - W THD+N = 0.5 %, fi = 100 Hz - 13.7 - W THD+N = 10 %, fi = 1 kHz 15.4 17.1 - W THD+N = 10 %, fi = 100 Hz - 17.1 - W RL = 16 Ω; VP = 25 V THD+N = 0.5 %, fi = 1 kHz 14.9 16.5 - W THD+N = 0.5 %, fi = 100 Hz - 16.5 - W THD+N = 10 %, fi = 1 kHz 18.9 20.6 - W THD+N = 10 %, fi = 100 Hz - 20.6 - W THD+N total harmonic distortion-plus-noise Po = 1 W [3] fi = 1 kHz - 0.01 0.1 % fi = 6 kHz - 0.04 0.1 % Gv(cl) closed-loop voltage gain 35 36 37 dB |Zi| input impedance differential 35 50 - k Ω Vn(o) output noise voltage Ri = 0 Ω Operating mode [4] - 100 150 µV Mute mode [4] - 70 100 µV VO(mute) mute output voltage Mute mode; Vi = 1 V (RMS) - 100 - µV CMRR common mode rejection ratio Vi(cm) = 1 V (RMS) - 75 - dB ηpo output power efficiency Po = 17 W; VP = 17 V; RL = 8 Ω [5] 89 91 - % Po = 21 W; VP = 25 V; RL = 16 Ω 92 94 - % η po 2P o ⋅ 2P o ⋅ P + ----------------------- = |
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