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STP80NF55-08 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP80NF55-08 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() STP80NF55-08 - STB80NF55-08 - STW80NF55-08 Electrical characteristics 5/15 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 27 V, ID = 40 A RG =4.7 Ω VGS = 10 V (see Figure 13) 20 110 75 35 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 320 A VSD Forward on voltage ISD = 80 A, VGS = 0 1.5 V trr (2) Qrr IRRM 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A,VDD = 25 V di/dt=100 A/µs, Tj =150 °C (see Figure 18) 80 230 5.7 ns nC A |
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