VNB10N07 datasheet(2/14 Pages) STMICROELECTRONICS

2 / 14 page

ABSOLUTE MAXIMUM RATING

Symbol

Parameter

Value

Unit

Pow erSO-10

D2PAK

SOT -82FM

I SOW AT T220

VDS

Drain-source Volt age (Vin = 0)

Internally Clamped

Vin

Input Voltage

Drain Current

Internally Limited

Reverse DC O utput Current

-14

Vesd

Electrostatic Discharge (C= 100 pF,

R=1.5 K

Ω)

2000

Ptot

Tot al Dissipation at Tc =25

oC50

9.5

Operating Junct ion T emperature

Internally Limited

Case O perat ing T emperature

Internally Limited

Tstg

Storage Temperature

-55 t o 150

THERMAL DATA

ISOW ATT220

Po werSO -10

SOT82-FM

D2PAK

Rthj-ca se Thermal Resistance

Junction-case

Max

2.5

oC/W

Rthj-a mb Thermal Resistance

Junction-ambient

Max

62.5

100

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VCLAMP

Drain-source Clamp

Voltage

ID = 200 mA

Vin = 0

VCLTH

Drain-source Clamp

Threshold Voltage

ID =2 mA

Vin =0

VINCL

Input-Source Reverse

Clamp Volt age

Iin =-1 mA

-1

-0.3

IDSS

Zero Input Voltage

Drain Current (Vin =0)

VDS =13 V

Vin =0

VDS =25 V

Vin =0

200

µA

IISS

Supply Current from

Input Pin

VDS =0 V

Vin = 10 V

250

500

µA

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VIN(th)

Input Threshold

Voltage

VDS =Vin

ID +Iin =1 mA

0. 8

RDS(on)

St atic Drain-source On

Resistance

Vin =10 V

ID =5 A

Vin =5 V

ID =5 A

0.1

0.14

Ω

VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07

2/14

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