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TN2124 Datasheet(PDF) 2 Page - Supertex, Inc |
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TN2124 Datasheet(HTML) 2 Page - Supertex, Inc |
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2 / 4 page ![]() 2 TN2124 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 10V V DD R gen 0V 0V Package I D (continuous)* I D (pulsed) Power Dissipation θ jc θ ja I DR*IDRM @ TA = 25°C °C/W °C/W TO-236AB 134mA 250mA 0.36W 200 350 134mA 250mA TO-243AA 230mA 1.1A 1.6W† 15 78† 230mA 1.1A * I D (continuous) is limited by max rated Tj. † Mounted on FR5 board. 25mmx25mmx1.57mm. Significant P D increase possible on ceramic substrate. Thermal Characteristics Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BV DSS Drain-to-Source Breakdown Voltage 240 V I D = 1mA, VGS = 0V V GS(th) Gate Threshold Voltage 0.8 2.0 V V GS = VDS, ID = 1mA ∆V GS(th) Change in VGS(th) with Temperature -5.5 mV/ °CI D = 1mA, VGS = VDS I GSS Gate Body Leakage 0.1 100 nA V GS = ±20V, VDS = 0V I DSS Zero Gate Voltage Drain Current 1 µAV GS = 0V, VDS = Max Rating 100 µAV GS = 0V, VDS = 0.8 Max Rating T A = 125°C ID(ON) ON-State Drain Current 140 mA VGS = 4.5V, VDS = 25V R DS(ON) 30 Ω V GS = 3V, ID = 25mA 15 Ω V GS = 4.5V, ID = 120mA ∆R DS(ON) Change in RDS(ON) with Temperature 0.7 1.0 %/ °CI D = 120mA, VGS = 4.5V G FS Forward Transconductance 100 170 m V DS = 25V, ID = 120mA C ISS Input Capacitance 38 50 COSS Common Source Output Capacitance 9 15 pF VGS = 0V, VDS = 25V, f = 1MHz C RSS Reverse Transfer Capacitance 3 5 t d(ON) Turn-ON Delay Time 4 7 tr Rise Time 2 5 t d(OFF) Turn-OFF Delay Time 7 10 t f Fall Time 9 12 VSD Diode Forward Voltage Drop 1.8 V ISD = 120mA, VGS = 0V t rr Reverse Recovery Time 400 ns I SD = 120mA, VGS = 0V Notes: 1.All D.C. parameters 100% tested at 25 °C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Electrical Characteristics (@ 25 °C unless otherwise specified) V DD = 25V ns I D = 140mA R GEN = 25Ω Static Drain-to-Source ON-State Resistance |
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