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TP2424 Datasheet(PDF) 2 Page - Supertex, Inc

Part # TP2424
Description  P-Channel Enhancement-Mode Vertical DMOS FETs
PDF  2 Pages
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TP2424 Datasheet(HTML) 2 Page - Supertex, Inc

  TP2424 Datasheet HTML 1Page - Supertex, Inc TP2424 Datasheet HTML 2Page - Supertex, Inc  
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2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
TP2424
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Thermal Characteristics
Package
I
D (continuous)*
I
D (pulsed)
Power Dissipation
θjc
θja
I
DR*IDRM
@ TA = 25°C
°C/W
°C/W
TO-243AA
-316mA
-1.9A
1.6W
15
78
-316mA
-1.9A
* I
D (continuous) is limited by max rated Tj.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D increase possible on ceramic substrate.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source
-240
V
V
GS = 0V, ID = -250µA
Breakdown Voltage
VGS(th)
Gate Threshold Voltage
-1.0
-2.4
V
VGS = VDS, ID= -1.0mA
∆VGS(th)
Change in V
GS(th) with Temperature
4.5
mV/°CVGS = VDS, ID= -1.0mA
IGSS
Gate Body Leakage
-100
nA
VGS = ± 20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
-10.0
µAVGS = 0V, VDS = Max Rating
-1.0
mA
V
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
I
D(ON)
ON-State Drain Current
-0.3
V
GS = -4.5V, VDS = -25V
-0.8
VGS = -10V, VDS = -25V
RDS(ON)
10.0
VGS = -4.5V, ID = -150mA
8.0
V
GS = -10V, ID = -500mA
∆RDS(ON)
Change in RDS(ON) with Temperature
0.75
%/°CVGS = -10V, ID = -500mA
GFS
Forward Transconductance
150
m
VDS = -25V, ID = -200mA
C
ISS
Input Capacitance
200
COSS
Common Source Output Capacitance
100
pF
C
RSS
Reverse Transfer Capacitance
40
t
d(ON)
Turn-ON Delay Time
20
tr
Rise Time
30
t
d(OFF)
Turn-OFF Delay Time
35
t
f
Fall Time
25
VSD
Diode Forward Voltage Drop
-1.5
V
VGS = 0V, ISD = -500mA
t
rr
Reverse Recovery Time
300
ns
V
GS = 0V, ISD = -500mA
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
A
ns
VDD = -25V,
I
D = -250mA,
R
GEN = 25Ω
VGS = 0V, VDS = -25V
f = 1.0 MHz
Static Drain-to-Source
ON-State Resistance



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