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TP2435 Datasheet(PDF) 2 Page - Supertex, Inc

Part # TP2435
Description  P-Channel Enhancement-Mode Vertical DMOS FETs
PDF  4 Pages
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TP2435 Datasheet(HTML) 2 Page - Supertex, Inc

  TP2435 Datasheet HTML 1Page - Supertex, Inc TP2435 Datasheet HTML 2Page - Supertex, Inc TP2435 Datasheet HTML 3Page - Supertex, Inc TP2435 Datasheet HTML 4Page - Supertex, Inc  
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2
TP2435
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Thermal Characteristics
Package
I
D (continuous)*
I
D (pulsed)
Power Dissipation
θjc
θja
I
DR*IDRM
@ T
A = 25°C
°C/W
°C/W
TO-243AA
-231mA
-1.1A
1.6W
15
78
-231mA
-1.1A
* I
D (continuous) is limited by max rated Tj.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D increase possible on ceramic substrate.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source
-350
V
V
GS = 0V, ID = -250µA
Breakdown Voltage
VGS(th)
Gate Threshold Voltage
-1.0
-2.4
V
VGS = VDS, ID= -1.0mA
∆VGS(th)
Change in V
GS(th) with Temperature
4.5
mV/°CVGS = VDS, ID= -1.0mA
IGSS
Gate Body Leakage
-100
nA
VGS = ± 20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
-10.0
µAVGS = 0V, VDS = Max Rating
-1.0
mA
V
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
I
D(ON)
ON-State Drain Current
-0.3
V
GS = -4.5V, VDS = -25V
-0.8
VGS = -10V, VDS = -25V
RDS(ON)
15
VGS = -3.0V, ID = -20mA
15
V
GS = -4.5V, ID = -150mA
15
VGS = -10V, ID = -500mA
∆RDS(ON)
Change in RDS(ON) with Temperature
1.7
%/°CVGS = -10V, ID = -150mA
G
FS
Forward Transconductance
125
m
V
DS = -25V, ID = -350mA
CISS
Input Capacitance
200
C
OSS
Common Source Output Capacitance
70
pF
C
RSS
Reverse Transfer Capacitance
25
td(ON)
Turn-ON Delay Time
15
t
r
Rise Time
20
t
d(OFF)
Turn-OFF Delay Time
25
tf
Fall Time
50
V
SD
Diode Forward Voltage Drop
-1.5
V
V
GS = 0V, ISD = -750mA
t
rr
Reverse Recovery Time
300
ns
V
GS = 0V, ISD = -750mA
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
A
ns
VDD = -25V,
I
D = -250mA,
R
GEN = 25Ω
VGS = 0V, VDS = -25V
f = 1.0 MHz
Static Drain-to-Source
ON-State Resistance



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