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TP5335 Datasheet(PDF) 2 Page - Supertex, Inc

Part # TP5335
Description  P-Channel Enhancement-Mode Vertical DMOS FETs
PDF  2 Pages
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TP5335 Datasheet(HTML) 2 Page - Supertex, Inc

  TP5335 Datasheet HTML 1Page - Supertex, Inc TP5335 Datasheet HTML 2Page - Supertex, Inc  
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2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-350
V
VGS = 0V, ID = -100µA
V
GS(th)
Gate Threshold Voltage
-1.0
-2.4
V
V
GS = VDS, ID = -1.0mA
∆VGS(th)
Change in VGS(th) with Temperature
4.5
mV/°CVGS = VDS, ID = -1.0mA
I
GSS
Gate Body Leakage
-100
nA
V
GS = ±20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
-10
µAVGS = 0V, VDS = Max Rating
-1.0
mA
V
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
-5.0
nA
V
GS = 0V, VDS = -330V
ID(ON)
ON-State Drain Current
-200
mA
VGS = -4.5V, VDS = -25V
-400
VGS = -10V, VDS = -25V
R
DS(ON)
75
V
GS = -4.5V, ID = -150mA
30
VGS = -10V, ID = -200mA
∆RDS(ON)
Change in RDS(ON) with Temperature
1.7
%/°CVGS = -10V, ID = -200mA
G
FS
Forward Transconductance
125
m
V
DS = -25V, ID = -200mA
C
ISS
Input Capacitance
110
COSS
Common Source Output Capacitance
60
pF
C
RSS
Reverse Transfer Capacitance
22
t
d(ON)
Turn-ON Delay Time
20
tr
Rise Time
15
td(OFF)
Turn-OFF Delay Time
25
t
f
Fall Time
25
V
SD
Diode Forward Voltage Drop
-1.8
V
V
GS = 0V, ISD = -200mA
trr
Reverse Recovery Time
800
ns
VGS = 0V, ISD = -200mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
GS = 0V, VDS = -25V
f = 1 MHz
VDD = -25V
ns
I
D = -150mA
RGEN = 25Ω
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*IDRM
@ T
A = 25°C
°C/W
°C/W
SOT-23
-85mA
-400mA
0.36W
200
350
-85mA
-400mA
* I
D (continuous) is limited by max rated Tj.
Thermal Characteristics
TP5335



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