Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

VP3203 Datasheet(PDF) 2 Page - Supertex, Inc

Part # VP3203
Description  P-Channel Enhancement-Mode Vertical DMOS FETs
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

VP3203 Datasheet(HTML) 2 Page - Supertex, Inc

  VP3203 Datasheet HTML 1Page - Supertex, Inc VP3203 Datasheet HTML 2Page - Supertex, Inc VP3203 Datasheet HTML 3Page - Supertex, Inc VP3203 Datasheet HTML 4Page - Supertex, Inc  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
2
Package
I
D (continuous)*
I
D (pulsed)
Power Dissipation
θjc
θja
I
DR*IDRM
@ TA = 25°C
°C/W
°C/W
TO-92
-0.65A
-4.0A
0.74W
125
170
-0.65A
-4.0A
TO-243AA
-1.1A
-4.0A
1.6W
15
78
-1.1A
-4.0A
* I
D (continuous) is limited by max rated Tj.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D increase possible on ceramic substrate.
VP3203
Thermal Characteristics
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS = 0V, ID = -10mA
VGS(th)
Gate Threshold Voltage
-1.0
-3.5
V
VGS = VDS, ID = -10mA
∆VGS(th)
Change in V
GS(th) with Temperature
-5.5
mV/°CVGS = VDS, ID = -10mA
I
GSS
Gate Body Leakage
-1.0
-100
nA
V
GS = ±20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
-10
µAVGS = 0V, VDS = Max Rating
-1
mA
V
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
I
D(ON)
ON-State Drain Current
-14
A
V
GS = -10V, VDS = -5V
R
DS(ON)
TO-92
1.0
V
GS = -4.5V, ID = -1.5A
SOT-89
1.0
VGS = -4.5V, ID = -0.75A
TO-92
0.6
V
GS = -10V, ID = -3A
SOT-89
0.6
V
GS = -10V, ID = -1.5A
∆RDS(ON)
Change in RDS(ON) with Temperature
1.0
%/°CVGS = -10V, ID = -1.5A
G
FS
Forward Transconductance
1.0
2.0
V
DS = -25V, ID = -2A
CISS
Input Capacitance
200
300
COSS
Common Source Output Capacitance
100
120
pF
C
RSS
Reverse Transfer Capacitance
45
60
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
25
tf
Fall Time
25
VSD
Diode Forward Voltage Drop
-1.6
V
VGS = 0V, ISD = -1.5A
t
rr
Reverse Recovery Time
300
ns
V
GS = 0V, ISD = -1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
ns
V
GS = 0V, VDS = -25V
f = 1 MHz
VDD = -25V
ID = -2A
R
GEN = 10Ω
Static Drain-to-Source
ON-State Resistance



Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com