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2SC3632-Z Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC3632-Z Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 2.3 0.60+0.1 -0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4.60+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter www.kexin.com.cn NPN Silicon Epitaxial Transistor 2SC3632-Z Features High voltage VCEO=600V High speed tf 0.5ìs Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 600 V Collector to emitter voltage VCES 600 V Emitter to base voltage VEBO 7V Peak collector current *1 ICP 2A Collector current IC 1A Total power dissipation Ta=25 *2 PT 2W Junction temperature Tj 150 Storage temperature Tstg -55to+150 *1 pw 10ms,Duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm 2X0.7mm Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit collecotr cutoff current ICBO VCB=600V,IE=0 10 ìA Emitter cutoff current IEBO VEB=7V,IC=0 10 ìA VCE=5V,IC=100mA 30 55 120 VCE=5V,IC=100mA 5 7 Collector saturation voltage VCE(sat) IC=400mA,IB=80mA 0.35 1.0 V Base to saturation voltage VBE(sat) IC=400mA,IB=80mA 0.9 1.2 V Gain Bandwidth Product fT VCE=5V,IE=-50mA 30 MHz Output capacitance cob VCB=10V,IE=0A,f=1MHz 14 pF Turn-on time ton IC=0.5A,RL=500Ù 0.1 0.5 ìs Storage time tstg IB1=-IB2=0.1A 4.0 5.0 ìs Fall time tf VCC=250V 0.2 0.5 ìs hFE DC Current Gain hFE Classification Marking M L K hFE 30to60 40to80 60to120 |
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