2SB1261-Z datasheet(2/2 Pages) KEXIN

Part #	2SB1261-Z

Description	PNP Silicon Epitaxial Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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2 / 2 page

SMD Type

Transistors

www.kexin.com.cn

hFE Classification

Rank

hFE

100

200

160

320

200

400

2SB1261-Z

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB =-60 V, IE =0

-10

ìA

Emitter cutoff current

IEBO

VEB =-7.0V, IC =0

-10

ìA

VCE =-2.0V, IC = -0.6A

100

400

VCE =-2.0V, IC = -2A

Collector saturation voltage *

VCE(sat) IC = -1.5A, IB = -0.15A

-0.2

-0.3

Base saturation voltage *

VBE(sat) IC = -1.5A, IB = -0.15A

-0.94

-1.2

Gain bandwidth product

VCE =-5.0V, IE =1.5A

MHz

Output capacitance

Cob

VCB =-10 V, IE = 0 , f = 1.0 MHz

Turn-on time

ton

0.15

0.5

ìs

Storage time

tstg

0.5

2.0

ìs

Fall time

0.1

0.5

ìs

* Pulsed: PW

350 ìs, duty cycle

IC =-1.0A,IB1 =-IB2 =-0.1A, VCC =-

10 V, RL=10Ù

DC current gain *

hFE

2SB1261-Z Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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