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KTHD3100C Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Part # KTHD3100C
Description  Power MOSFET
PDF  3 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KTHD3100C Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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2
SMD Type
IC
SMD Type
IC
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
ID=250
A,VGS=0V
N-Ch
20
ID=-250
A,VGS=0V
P-Ch
-20
VDS=16V,VGS=0V
1
VDS=16V,VGS=0V,TJ =25
5.0
VDS=-16V,VGS=0V
-1
VDS=-16V,VGS=0V,TJ = 125
-5
VDS =0V, VGS =
12 V
N-Ch
100
VDS =0V, VGS =
8V
P-Ch
100
VDS =VGS,ID = 250
A
N-Ch
0.6
1.2
VDS =VGS,ID = -250
A
P-Ch
-0.45
-1.5
ID=2.9A,VGS=4.5A
58
80
ID=2.3A,VGS=2.5V
77
115
ID=-3.2A,VGS=-4.5V
64
80
ID=-2.2A,VGS=-2.5V
85
110
ID=2.9A,VDS=10V
N-Ch
6.0
ID=-3.2A,VDS=-10V
P-Ch
8.0
N-Channel
N-Ch
165
VDS=10V,VGS=0V,f=1MHz
P-Ch
680
N-Ch
80
P-Channel
P-Ch
100
VDS=-10V,VGS=0V,f=1MHz
N-Ch
25
P-Ch
70
VGS =4.5 V, VDS =10V, ID = 2.9 A
N-Ch
2.3
VGS =-4.5 V, VDS =-10 V, ID =-3.2 A
P-Ch
7.4
VGS =4.5 V, VDS =10V, ID = 2.9 A
N-Ch
0.2
VGS =-4.5 V, VDS =-10 V, ID =-3.2 A
P-Ch
0.6
VGS =4.5 V, VDS =10V, ID = 2.9 A
N-Ch
0.4
VGS =-4.5 V, VDS =-10 V, ID =-3.2 A
P-Ch
1.4
VGS =4.5 V, VDS =10V, ID = 2.9 A
N-Ch
0.7
VGS =-4.5 V, VDS =-10 V, ID =-3.2 A
P-Ch
2.5
ID=2.9A,VDD=10V
N-Ch
6.3
ID=-3.2A,VDD=-10V
P-Ch
5.8
N-Channel
N-Ch
10.7
VGS=4.5V,RG=2.5
*2
P-Ch
11.7
N-Ch
9.6
P-Channel
P-Ch
16
VGS=-4.5V,,RG=2.5
*2
N-Ch
1.5
P-Ch
12.4
IS=2.5 A,VGS=0V
N-Ch
0.8
1.15
IS=-2.5 A,VGS=0 V
P-Ch
-0.8
-1.2
V
Forward Voltage *1
VSD
m
S
V
V
V(BR) DSS
Drain-source breakdown voltage
Gate threshold voltage *1
Zero gate voltage drain current
IGSS
pF
Coss
Output capacitance
QGD
Gate?to?Drain "Miller" Charge
td(on)
Turn-on delay time
tr
Rise time
tf
Fall time *1
RDS (on)
Static drain-source on-state
resistance *1
td (off)
Turn-off delay time *1
Crss
Reverse transfer capacitance
Ciss
Input capacitance
Testconditons
N-Ch
P-Ch
Gate?to?Source Gate Charge
QGS
RDS (on)
Static drain-source on-state
resistance *1
gFS
Forward Transconductance
VGS (th)
ns
ns
ns
ns
N-Ch
P-Ch
A
IDSS
Gate?to?Source Leakage Current
nA
Total Gate Charge
QG(TOT)
nC
QG(TH)
Threshold Gate Charge
m
pF
pF
KTHD3100C



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