BFQ591 datasheet(2/4 Pages) ISC

2 / 4 page

INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor

BFQ591

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CES

Collector-Emitter Breakdown Voltage

IC= 0.1mA ; IB= 0

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 0.1m A ; IE= 0

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 0.1m A ; IC= 0

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

0.1

μA

hFE

DC Current Gain

IC= 70mA ; VCE= 8V

250

Current-Gain—Bandwidth Product

IC= 70mA ; VCE= 12V; f= 1GHz

GHz

Power Gain

IC= 70mA;VCE= 12V; f= 900MHz

Power Gain

IC= 70mA;VCE= 12V; f= 2GHz

5.5

Cre

Feedback Capacitance

IE= 0 ; VCB= 12V; f= 1MHz

0.8

︱S21e︱

Insertion Power Gain

IC= 70mA ; VCE= 12V; f= 1GHz

Output Voltage

note

700

Note:

dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo

−6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz;

measured @ f(p+q+r) = 793.25 MHz.

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