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BD550B Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD550B Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor Product Specification isc Silicon NPN Power Transistors BD550B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0 250 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; RBE= 100Ω 275 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A B 2 V VBE(on) Base-Emitter On Voltage IC= 2A ; VCE= 4V 2 V ICER Collector Cutoff Current VCE= 250V; RBE= 100Ω 1 mA ICEO Collector Cutoff Current VCE= 200V; IB= 0 5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE DC Current Gain IC= 2A ; VCE= 4V 10 50 fT Current Gain-Bandwidth Product IC= 0.2A ; VCE= 10V 5 MHz isc Website:www.iscsemi.cn |
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